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HSK120
Silicon Epitaxial Planar Diode for High Speed Switching
REJ03G0192-0400Z (Previous: ADE-208-171C) Rev.4.00 Mar.22.2004
Features
* Low reverse recovery time. (trr = 3.0 ns max) * LLD package is suitable for high density surface mounting and high speed assembly.
Ordering Information
Type No. HSK120 Laser Mark White Package Code LLD
Pin Arrangement
Cathode band 1 2
Cathode band 1 2
1. Cathode 2. Anode
Rev.4.00, Mar.22.2004, page 1 of 4
HSK120
Absolute Maximum Ratings
(Ta = 25C)
Item Peak reverse voltage Reverse voltage Peak forward current Non-Repetitive peak forward surge current Average rectified current Junction temperature Storage temperature Note: 1. Within 1s forward surge current. Symbol VRM VR IFM IFSM *1 IO Tj Tstg Value 70 60 450 4 150 175 -65 to +175 Unit V V mA A mA C C
Electrical Characteristics
(Ta = 25C)
Item Forward voltage Reverse voltage Reverse current Capacitance Reverse recovery time Symbol VF VR IR C trr Min -- 70 -- -- -- Typ -- -- -- -- -- Max 0.8 -- 0.1 3.0 3.0 Unit V V A pF ns Test Condition IF = 10 mA IR = 5 A VR = 60 V VR = 0 V, f = 1 MHz IF = 10 mA, VR = 6 V, RL = 50 , Irr = 0.1IR
Rev.4.00, Mar.22.2004, page 2 of 4
HSK120
Main Characteristics
10-1 10-4 Ta = 125C 10-5 10-2
Reverse current IR (A)
Forward current IF (A)
10-6
Ta = 75C
Ta =1 Ta = 25C 75 C Ta = 25C Ta = -25C
10-7 Ta = 25C 10
-8
10
-3
10-4
0
0.2
0.4
0.6
0.8
1.0
1.2
10-9
0
20
40
60
80
100
Forward voltage VF (V) Fig.1 Forward current vs. Forward voltage
Reverse voltage VR (V) Fig.2 Reverse current vs. Reverse voltage
f = 1MHz
10
Capacitance C (pF)
1.0
0.1 1.0
10 Reverse voltage VR (V)
100
Fig.3 Capacitance vs. Reverse voltage
Rev.4.00, Mar.22.2004, page 3 of 4
HSK120
Package Dimensions
As of January, 2003
Unit: mm
3.5
+0.1 -0.2
1.35 0.1*
(0.35 Typ)
Package Code JEDEC JEITA Mass (reference value) LLD -- -- 0.027 g
* HSK122: 1.4 0.1 type
Rev.4.00, Mar.22.2004, page 4 of 4
Sales Strategic Planning Div.
Keep safety first in your circuit designs!
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1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corp. product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corp. or a third party. 2. Renesas Technology Corp. assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application examples contained in these materials. 3. All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of publication of these materials, and are subject to change by Renesas Technology Corp. without notice due to product improvements or other reasons. It is therefore recommended that customers contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor for the latest product information before purchasing a product listed herein. The information described here may contain technical inaccuracies or typographical errors. Renesas Technology Corp. assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors. Please also pay attention to information published by Renesas Technology Corp. by various means, including the Renesas Technology Corp. Semiconductor home page (http://www.renesas.com). 4. When using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to evaluate all information as a total system before making a final decision on the applicability of the information and products. Renesas Technology Corp. assumes no responsibility for any damage, liability or other loss resulting from the information contained herein. 5. Renesas Technology Corp. semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life is potentially at stake. Please contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor when considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use. 6. The prior written approval of Renesas Technology Corp. is necessary to reprint or reproduce in whole or in part these materials. 7. If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and cannot be imported into a country other than the approved destination. Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited. 8. Please contact Renesas Technology Corp. for further details on these materials or the products contained therein.
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(c) 2004. Renesas Technology Corp., All rights reserved. Printed in Japan.
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